AS3D030065C

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650V,30A SILICON CARBIDE SCHOTTK

Active

650V,30A SILICON CARBIDE SCHOTTK

Description

General part information

Diode 650 V 35A Through Hole TO-247-2

Parameters and characteristics for this part

Specification	AS3D030065C

Capacitance	1805 pF
Current - Average Rectified (Io)	35 A
Current - Reverse Leakage	20 µA
Mounting Type	Through Hole
Operating Temperature - Junction (Max)	175 °C
Operating Temperature - Junction (Min)	-55 °C
Package / Case	TO-247-2
Package Name	TO-247-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Speed - Fast Recovery (Minimum)	500 mA
Speed - Recovery Current	500 mA, 500 mA
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	650 V
Voltage - Forward (Vf) (Max)	1.8 V

Part	Package Name	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Voltage - DC Reverse (Vr) (Max)	Voltage - Forward (Vf) (Max)	Current - Reverse Leakage	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Mounting Type	Package / Case	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Capacitance	Technology
ANBON SEMICONDUCTOR (INT'L) LIMITED AS3D030065C	TO-247-2	175 °C	-55 °C	650 V	1.8 V	20 µA	35 A	0 ns	Through Hole	TO-247-2	500 mA	No Recovery Time	500 mA 500 mA	1805 pF	SiC (Silicon Carbide) Schottky

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