IXFL44N80

Obsolete

IXYS

MOSFET N-CH 800V 44A ISOPLUS264

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Obsolete

IXYS

MOSFET N-CH 800V 44A ISOPLUS264

Technical Specifications

Parameters and characteristics for this part

Specification	IXFL44N80

Current - Continuous Drain (Id) @ 25°C	44 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	380 nC
Input Capacitance (Ciss) (Max) @ Vds	10000 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power Dissipation (Max)	550 W
Rds On (Max) @ Id, Vgs	165 mOhm
Supplier Device Package	ISOPLUS264™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	FET Type	Technology	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Package / Case	Mounting Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds
IXYS IXFL44N60	N-Channel	MOSFET (Metal Oxide)	4.5 V	600 V	TO-264-3 TO-264AA	Through Hole	ISOPLUS264™	330 nC	8900 pF	20 V	500 W	-55 °C	150 °C	10 V	130 mOhm	41 A
IXYS IXFL44N80	N-Channel	MOSFET (Metal Oxide)	4 V	800 V	TO-264-3 TO-264AA	Through Hole	ISOPLUS264™			20 V	550 W	-55 °C	150 °C	10 V	165 mOhm	44 A	380 nC	10000 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 800 V 44A (Tc) 550W (Tc) Through Hole ISOPLUS264™

Technical documentation and resources

No documents available