TN5335N8-G
ActiveMOSFET, N-CHANNEL ENHANCEMENT-MODE, 350V, 15 OHM
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TN5335N8-G
ActiveMOSFET, N-CHANNEL ENHANCEMENT-MODE, 350V, 15 OHM
Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | TN5335N8-G | TN5335 Series |
|---|---|---|
| - | - | |
| Current - Continuous Drain (Id) @ 25°C | 230 mA | 110 - 230 mA |
| Drain to Source Voltage (Vdss) | 350 V | 350 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 3 V | 3 - 10 V |
| FET Type | N-Channel | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 110 pF | 110 pF |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature [Max] | 150 °C | 150 °C |
| Operating Temperature [Min] | -55 °C | -55 °C |
| Package / Case | TO-243AA | SOT-23-3, TO-236-3, SC-59, TO-243AA |
| Power Dissipation (Max) | - | 360 mW |
| Rds On (Max) @ Id, Vgs | 15 Ohm | 15 Ohm |
| Supplier Device Package | TO-243AA (SOT-89) | SOT-23 (TO-236AB), TO-243AA (SOT-89) |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V | 20 V |
| Vgs(th) (Max) @ Id | 2 V | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.14 | |
| 25 | $ 0.95 | |||
| 100 | $ 0.87 | |||
| Digi-Reel® | 1 | $ 1.14 | ||
| 25 | $ 0.95 | |||
| 100 | $ 0.87 | |||
| Tape & Reel (TR) | 2000 | $ 0.87 | ||
| Microchip Direct | T/R | 1 | $ 1.14 | |
| 25 | $ 0.95 | |||
| 100 | $ 0.87 | |||
| 1000 | $ 0.72 | |||
| 5000 | $ 0.65 | |||
| 10000 | $ 0.61 | |||
TN5335 Series
MOSFET, N-Channel Enhancement-Mode, 350V, 15 Ohm
| Part | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Vgs (Max) | Package / Case | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Mounting Type | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Technology | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology TN5335K1-G | |||||||||||||||
Microchip Technology TN5335K1-G | 3 V, 10 V | N-Channel | 20 V | SC-59, SOT-23-3, TO-236-3 | 15 Ohm | 350 V | 360 mW | Surface Mount | SOT-23 (TO-236AB) | -55 °C | 150 °C | 2 V | MOSFET (Metal Oxide) | 110 pF | 110 mA |
Microchip Technology TN5335K1-G | |||||||||||||||
Microchip Technology TN5335N8-G | 3 V, 10 V | N-Channel | 20 V | TO-243AA | 15 Ohm | 350 V | Surface Mount | TO-243AA (SOT-89) | -55 °C | 150 °C | 2 V | MOSFET (Metal Oxide) | 110 pF | 230 mA |
Description
General part information
TN5335 Series
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Documents
Technical documentation and resources