IPI120P04P4L03AKSA1

Obsolete

Infineon Technologies

MOSFET P-CH 40V 120A TO262-3

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Obsolete

Infineon Technologies

MOSFET P-CH 40V 120A TO262-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPI120P04P4L03AKSA1

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	234 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	15000 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	136 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	3.4 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	2.2 V

Part	Package / Case	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Vgs (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Qualification	Technology	Grade	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]
Infineon Technologies IPI120P04P4L03AKSA1	I2PAK TO-262-3 Long Leads TO-262AA	Through Hole	4.5 V 10 V	2.2 V	136 W	16 V	P-Channel	15000 pF	AEC-Q101	MOSFET (Metal Oxide)	Automotive	234 nC	3.4 mOhm	120 A	40 V	-55 °C	175 ░C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 40 V 120A (Tc) 136W (Tc) Through Hole PG-TO262-3-1

Technical documentation and resources