IPD5N03LAG

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Infineon Technologies

MOSFET N-CH 25V 50A TO252-3

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Unknown

Infineon Technologies

MOSFET N-CH 25V 50A TO252-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPD5N03LAG

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	22 nC
Input Capacitance (Ciss) (Max) @ Vds	2653 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Rds On (Max) @ Id, Vgs	5.2 mOhm
Supplier Device Package	PG-TO252-3-11
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Rds On (Max) @ Id, Vgs	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Technology	Vgs(th) (Max) @ Id	FET Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Package / Case
Infineon Technologies IPD5N03LAG	5.2 mOhm	PG-TO252-3-11	22 nC	Surface Mount	MOSFET (Metal Oxide)	2 V	N-Channel	20 V	4.5 V 10 V	-55 °C	175 ░C	2653 pF	25 V	50 A	DPAK (2 Leads + Tab) SC-63 TO-252-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 25 V 50A (Tc) Surface Mount PG-TO252-3-11

Technical documentation and resources