2SA1837,HFEYHF(J

Obsolete

Toshiba Semiconductor and Storage

TRANS PNP 230V 1A TO220NIS

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Obsolete

Toshiba Semiconductor and Storage

TRANS PNP 230V 1A TO220NIS

Technical Specifications

Parameters and characteristics for this part

Specification	2SA1837,HFEYHF(J

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100 hFE
Frequency - Transition	70 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power - Max [Max]	2 W
Supplier Device Package	TO-220NIS
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max)	230 V

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Current - Collector Cutoff (Max) [Max]	Package / Case	Operating Temperature	Frequency - Transition	Supplier Device Package
Toshiba Semiconductor and Storage 2SA1837,TOA1F(J	100 hFE	1.5 V	2 W	1 A	PNP	230 V	Through Hole	1 µA	TO-220-3 Full Pack	150 °C	70 MHz	TO-220NIS
Toshiba Semiconductor and Storage 2SA1837,S1CSF(J	100 hFE	1.5 V	2 W	1 A	PNP	230 V	Through Hole	1 µA	TO-220-3 Full Pack	150 °C	70 MHz	TO-220NIS
Toshiba Semiconductor and Storage 2SA1837,WNLF(J	100 hFE	1.5 V	2 W	1 A	PNP	230 V	Through Hole	1 µA	TO-220-3 Full Pack	150 °C	70 MHz	TO-220NIS
Toshiba Semiconductor and Storage 2SA1837,HFEYHF(M	100 hFE	1.5 V	2 W	1 A	PNP	230 V	Through Hole	1 µA	TO-220-3 Full Pack	150 °C	70 MHz	TO-220NIS
Toshiba Semiconductor and Storage 2SA1837,HFEYHF(J	100 hFE	1.5 V	2 W	1 A	PNP	230 V	Through Hole	1 µA	TO-220-3 Full Pack	150 °C	70 MHz	TO-220NIS

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor PNP 230 V 1 A 70MHz 2 W Through Hole TO-220NIS

Technical documentation and resources