IXFK260N17T

Obsolete

IXYS

MOSFET N-CH 170V 260A TO264AA

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Obsolete

IXYS

MOSFET N-CH 170V 260A TO264AA

Technical Specifications

Parameters and characteristics for this part

Specification	IXFK260N17T

Current - Continuous Drain (Id) @ 25°C	260 A
Drain to Source Voltage (Vdss)	170 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	400 nC
Input Capacitance (Ciss) (Max) @ Vds	24000 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power Dissipation (Max)	1670 W
Rds On (Max) @ Id, Vgs	6.5 mOhm
Supplier Device Package	TO-264AA (IXFK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Part	Current - Continuous Drain (Id) @ 25°C	Technology	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drain to Source Voltage (Vdss)	Mounting Type
IXYS IXFK260N17T	260 A	MOSFET (Metal Oxide)	10 V	24000 pF	5 V	N-Channel	400 nC	20 V	-55 °C	175 ░C	TO-264-3 TO-264AA	1670 W	6.5 mOhm	TO-264AA (IXFK)	170 V	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 170 V 260A (Tc) 1670W (Tc) Through Hole TO-264AA (IXFK)

Technical documentation and resources

No documents available