94-4007

Obsolete

Infineon Technologies

MOSFET N-CH 30V 35A DPAK

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Obsolete

Infineon Technologies

MOSFET N-CH 30V 35A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	94-4007

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	26 nC
Input Capacitance (Ciss) (Max) @ Vds	870 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	68 W
Rds On (Max) @ Id, Vgs	31 mOhm
Supplier Device Package	TO-252AA (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	1 V

Part	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Technology	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Mounting Type	Power Dissipation (Max)
Infineon Technologies 94-4007	30 V	1 V	TO-252AA (DPAK)	4.5 V 10 V	N-Channel	35 A	870 pF	26 nC	16 V	MOSFET (Metal Oxide)	31 mOhm	-55 °C	175 ░C	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	68 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 35A (Tc) 68W (Tc) Surface Mount TO-252AA (DPAK)

Technical documentation and resources

No documents available