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PJD9P06A-AU_L2_000A1

PJD9P06A-AU_L2_000A1

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Panjit International Inc.

MOSFETS 60V P-CHANNEL ENHANCEMENT MODE MOSFET

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PJD9P06A-AU_L2_000A1

PJD9P06A-AU_L2_000A1

Active
Panjit International Inc.

MOSFETS 60V P-CHANNEL ENHANCEMENT MODE MOSFET

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Description

General part information

PJD9 Series

P-Channel 60 V 2.5A (Ta), 7A (Tc) 2W (Ta), 15.6W (Tc) Surface Mount TO-252AA

Technical Specifications

Parameters and characteristics for this part

SpecificationPJD9P06A-AU_L2_000A1
Current - Continuous Drain (Id) (Ta)2.5 A
Current - Continuous Drain (Id) (Tc)7 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Max)8.3 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)430 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NameTO-252AA
Power Dissipation (Max)15.6 W, 2 W
QualificationAEC-Q101
Rds On (Max)170 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.5 V

Pricing

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CAD

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