STD13N50DM2AG

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STMicroelectronics

POWER TRANSISTORS

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STD13N50DM2AG

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STMicroelectronics

POWER TRANSISTORS

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STD13N50DM2AG

Current - Continuous Drain (Id) @ 25°C	11 A
Vgs (Max)	25 V

STD13N60M6 Series

N-channel 600 V, 320 mOhm typ., 10 A MDmesh M6 Power MOSFET in a DPAK package

Part	Power Dissipation (Max) [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs(th) (Max) @ Id	Technology	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
STMicroelectronics STD13N60M6	92 W	N-Channel	10 A	Surface Mount	4.75 V	MOSFET (Metal Oxide)	600 V	-55 °C	150 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	13 nC	380 mOhm	509 pF	TO-252 (DPAK)	10 V	25 V
STMicroelectronics STD13N50DM2AG			11 A													25 V

Pricing

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Description

General part information

STD13N60M6 Series

The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.

Documents

Technical documentation and resources