Specification	SI4455DY-T1-GE3

Current - Continuous Drain (Id) (Ta)	2 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On)	6 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	42 nC
Input Capacitance (Ciss) (Max)	1190 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power Dissipation (Max)	5.9 W
Rds On (Max)	295 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

SI4455 Series

Part	Vgs (Max)	Mounting Type	Technology	Gate Charge (Max)	FET Type	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)	Package Length	Package Name	Package Width	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Current - Continuous Drain (Id) (Ta)	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	Drive Voltage (Max Rds On, Min Rds On)
Vishay Dale SI4455DY-T1-GE3	20 V	Surface Mount	MOSFET (Metal Oxide)	42 nC	P-Channel	1190 pF	4 V	0.154 in	8-SOIC	3.9 mm	5.9 W	150 V	6 V	10 V	2 A	295 mOhm	-55 °C	150 °C
Vishay Dale SI4455DY-T1-E3	20 V	Surface Mount	MOSFET (Metal Oxide)	42 nC	P-Channel	1190 pF	4 V	0.154 in	8-SOIC	3.9 mm	3.1 W 5.9 W	150 V				295 mOhm	-55 °C	150 °C	2.8 A	10 V

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