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2N7002K-T1-GE3 - SOT-23-3

2N7002K-T1-GE3

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Vishay General Semiconductor - Diodes Division

MOSFET N-CH 60V 300MA TO236

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2N7002K-T1-GE3 - SOT-23-3

2N7002K-T1-GE3

Active
Vishay General Semiconductor - Diodes Division

MOSFET N-CH 60V 300MA TO236

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

Specification2N7002K-T1-GE3
Current - Continuous Drain (Id) @ 25°C300 mA
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs0.6 nC
Input Capacitance (Ciss) (Max) @ Vds30 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]350 mW
Rds On (Max) @ Id, Vgs2 Ohm
Supplier Device PackageSOT-23-3 (TO-236)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.28
10$ 0.19
100$ 0.09
500$ 0.08
1000$ 0.05
Digi-Reel® 1$ 0.28
10$ 0.19
100$ 0.09
500$ 0.08
1000$ 0.05
Tape & Reel (TR) 3000$ 0.04
6000$ 0.04
9000$ 0.03
15000$ 0.03
21000$ 0.03
30000$ 0.03
75000$ 0.03

Description

General part information

2N7002 Series

N-Channel 60 V 300mA (Ta) 350mW (Ta) Surface Mount SOT-23-3 (TO-236)

Documents

Technical documentation and resources