IXFR32N50Q

Obsolete

IXYS

MOSFET N-CH 500V 30A ISOPLUS247

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Obsolete

IXYS

MOSFET N-CH 500V 30A ISOPLUS247

Technical Specifications

Parameters and characteristics for this part

Specification	IXFR32N50Q

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	150 nC
Input Capacitance (Ciss) (Max) @ Vds	3950 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	310 W
Supplier Device Package	ISOPLUS247™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Vgs (Max)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Technology	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]
IXYS IXFR32N80Q3	30 V	6.5 V	140 nC	500 W	-55 °C	150 °C	TO-247-3	MOSFET (Metal Oxide)	ISOPLUS247™	300 mOhm	10 V	N-Channel	800 V	24 A	6940 pF	Through Hole
IXYS IXFR32N50
IXYS IXFR32N50Q	20 V	4.5 V			-55 °C	150 °C	TO-247-3	MOSFET (Metal Oxide)	ISOPLUS247™		10 V	N-Channel	500 V	30 A		Through Hole	150 nC	3950 pF	310 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 30A (Tc) 310W (Tc) Through Hole ISOPLUS247™

Technical documentation and resources

No documents available