IXFT60N50P3

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IXYS

MOSFET N-CH 500V 60A TO268

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IXYS

MOSFET N-CH 500V 60A TO268

Technical Specifications

Parameters and characteristics for this part

Specification	IXFT60N50P3

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	96 nC
Input Capacitance (Ciss) (Max) @ Vds	6250 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D3PAK (2 Leads + Tab), TO-268AA, TO-268-3
Power Dissipation (Max)	1040 W
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	TO-268AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	FET Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Package / Case	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id
IXYS IXFT60N50P3	10 V	1040 W	N-Channel	100 mOhm	30 V	96 nC	MOSFET (Metal Oxide)	Surface Mount	60 A	6250 pF	TO-268AA	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	500 V	-55 °C	150 °C	5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	300	$ 6.14

General part information

N-Channel 500 V 60A (Tc) 1040W (Tc) Surface Mount TO-268AA

Technical documentation and resources

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