LL4002G L0G

Obsolete

Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 1A MELF

Search across all available documentation for this part.

Obsolete

Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 1A MELF

Technical Specifications

Parameters and characteristics for this part

Specification	LL4002G L0G

Capacitance @ Vr, F	15 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-213AB, MELF
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	MELF
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Speed	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Supplier Device Package	Technology
Taiwan Semiconductor Corporation LL4002G L0G	1 A	100 V	1.1 V	Surface Mount	DO-213AB MELF	150 °C	-65 C	Standard Recovery >500ns	200 mA	5 µA	15 pF	MELF	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 100 V 1A Surface Mount MELF

Technical documentation and resources

No documents available