STW55NM60N

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STMicroelectronics

MOSFET N-CH 600V 51A TO247-3

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STMicroelectronics

MOSFET N-CH 600V 51A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	STW55NM60N

Current - Continuous Drain (Id) @ 25°C	51 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	190 nC
Input Capacitance (Ciss) (Max) @ Vds	5800 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-247-3
Power Dissipation (Max)	350 W
Rds On (Max) @ Id, Vgs	60 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

MOSFET N-CH 600V 51A TO247-3

Part	Rds On (Max) @ Id, Vgs	Mounting Type	Power Dissipation (Max)	Technology	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Vgs (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Drain to Source Voltage (Vdss)
STMicroelectronics STW55NM60N	60 mOhm	Through Hole	350 W	MOSFET (Metal Oxide)	150 °C	10 V	4 V	25 V	N-Channel	5800 pF	TO-247-3	190 nC	51 A	TO-247-3	600 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 51A (Tc) 350W (Tc) Through Hole TO-247-3

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