STL7N10F7

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STMicroelectronics

N-CHANNEL 100 V, 0.027 OHM TYP., 7 A STRIPFET F7 POWER MOSFET IN A POWERFLAT 3.3X3.3 PACKAGE

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STL7N10F7

Active

STMicroelectronics

N-CHANNEL 100 V, 0.027 OHM TYP., 7 A STRIPFET F7 POWER MOSFET IN A POWERFLAT 3.3X3.3 PACKAGE

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Description Specifications Series Pricing CAD Documents

Description

General part information

STL7N10F7 Series

This device utilizes the 7thgeneration of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.

Technical Specifications

Parameters and characteristics for this part

Specification	STL7N10F7

Current - Continuous Drain (Id) (Tj)	7 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	14 nC
Input Capacitance (Ciss) (Max)	920 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerVDFN
Package Length	3.3 mm
Package Name	PowerFlat™
Package Width	3.3 mm
Power Dissipation (Max)	2.9 W, 50 W
Rds On (Max)	35 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4.5 V

STL7N10F7 Series

N-channel 100 V, 0.027 Ohm typ., 7 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package

Part	Rds On (Max)	Package Name	Package Length	Package Width	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Vgs(th) (Max)	Gate Charge (Max)	Mounting Type	Package / Case	Current - Continuous Drain (Id) (Tj)	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Technology
STMicroelectronics STL7N10F7	35 mOhm	PowerFlat™	3.3 mm	3.3 mm	N-Channel	10 V	20 V	100 V	2.9 W 50 W	4.5 V	14 nC	Surface Mount	8-PowerVDFN	7 A	920 pF	-55 °C	150 °C	MOSFET (Metal Oxide)