Specification	MBR60030CTRL

Current - Average Rectified (Io) (per Diode)	300 A
Current - Reverse Leakage	3 mA
Diode Configuration	Common Anode
Diode Pair Count	1 pair
Mounting Type	Chassis Mount
Operating Temperature - Junction (Max)	150 °C
Operating Temperature - Junction (Min)	-55 °C
Package / Case	Twin Tower
Package Name	Twin Tower
Speed - Fast Recovery (Maximum)	500 ns
Speed - Fast Recovery (Minimum)	200 mA
Technology	Schottky
Voltage - DC Reverse (Vr) (Max)	30 V
Voltage - Forward (Vf) (Max)	580 mV

MBR60030 Series

Part	Current - Average Rectified (Io) (per Diode)	Mounting Type	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Current - Reverse Leakage	Technology	Speed - Fast Recovery (Maximum)	Speed - Fast Recovery (Minimum)	Voltage - DC Reverse (Vr) (Max)	Package / Case	Package Name	Diode Pair Count	Diode Configuration	Voltage - Forward (Vf) (Max)
GeneSiC Semiconductor MBR60030CTRL	300 A	Chassis Mount	150 °C	-55 °C	3 mA	Schottky	500 ns	200 mA	30 V	Twin Tower	Twin Tower	1 pair	Common Anode	580 mV
GeneSiC Semiconductor MBR60030CTR	300 A	Chassis Mount	150 °C	-55 °C	1 mA	Schottky	500 ns	200 mA	30 V	Twin Tower	Twin Tower	1 pair	Common Anode	750 mV
GeneSiC Semiconductor MBR60030CTR	300 A	Chassis Mount	150 °C	-55 °C	1 mA	Schottky	500 ns	200 mA	30 V	Twin Tower	Twin Tower	1 pair	Common Anode	750 mV
GeneSiC Semiconductor MBR60030CT	300 A	Chassis Mount	150 °C	-55 °C	1 mA	Schottky	500 ns	200 mA	30 V	Twin Tower	Twin Tower	1 pair	Common Cathode	750 mV
GeneSiC Semiconductor MBR60030CT	300 A	Chassis Mount	150 °C	-55 °C	1 mA	Schottky	500 ns	200 mA	30 V	Twin Tower	Twin Tower	1 pair	Common Cathode	750 mV
GeneSiC Semiconductor MBR60030CTRL	300 A	Chassis Mount	150 °C	-55 °C	3 mA	Schottky	500 ns	200 mA	30 V	Twin Tower	Twin Tower	1 pair	Common Anode	580 mV

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