Specification	SI5513DC-T1-E3

Configuration	N, P-Channel
Current - Continuous Drain (Id) (Maximum)	2.1 A
Current - Continuous Drain (Id) (Typical)	3.1 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Max)	6 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	Flat Leads, 8-SMD
Package Name	1206-8 ChipFET™
Power - Max	1.1 W
Rds On (Max)	75 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	1.5 V

SI5513 Series

Part	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Power - Max	Package / Case	Current - Continuous Drain (Id) (Typical)	Current - Continuous Drain (Id) (Maximum)	Technology	Vgs(th) (Max)	Gate Charge (Max)	Package Name	Configuration	FET Feature	Rds On (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)
Vishay Dale SI5513DC-T1-GE3	Surface Mount	-55 °C	150 °C	1.1 W	8-SMD Flat Leads	3.1 A	2.1 A	MOSFET (Metal Oxide)	1.5 V	6 nC	1206-8 ChipFET™	N P-Channel	Logic Level Gate	75 mOhm	20 V
Vishay Dale SI5513CDC-T1-E3	Surface Mount	-55 °C	150 °C	3.1 W	8-SMD Flat Leads	4 A	3.7 A	MOSFET (Metal Oxide)	1.5 V	4.2 nC	1206-8 ChipFET™	N P-Channel	Logic Level Gate	55 mOhm	20 V	285 pF
Vishay Dale SI5513CDC-T1-GE3	Surface Mount	-55 °C	150 °C	3.1 W	8-SMD Flat Leads	4 A	3.7 A	MOSFET (Metal Oxide)	1.5 V	4.2 nC	1206-8 ChipFET™	N P-Channel	Logic Level Gate	55 mOhm 55 mOhm 55 mOhm	20 V	285 pF
Vishay Dale SI5513DC-T1-E3	Surface Mount	-55 °C	150 °C	1.1 W	8-SMD Flat Leads	3.1 A	2.1 A	MOSFET (Metal Oxide)	1.5 V	6 nC	1206-8 ChipFET™	N P-Channel	Logic Level Gate	75 mOhm	20 V

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