HER606G

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 6A R-6

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Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 6A R-6

Technical Specifications

Parameters and characteristics for this part

Specification	HER606G

Capacitance @ Vr, F	65 pF
Current - Average Rectified (Io)	6 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	R-6, Axial
Reverse Recovery Time (trr)	75 ns
Speed	200 mA, 500 ns
Supplier Device Package	R-6
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Current - Average Rectified (Io)	Supplier Device Package	Current - Reverse Leakage @ Vr	Speed	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If
Taiwan Semiconductor Corporation HER606G	65 pF	600 V	Standard	6 A	R-6	10 µA	200 mA 500 ns	Through Hole	150 °C	-55 °C	R-6 Axial	75 ns	1.7 V

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General part information

Diode 600 V 6A Through Hole R-6

Technical documentation and resources