AUIRFS3306TRL

Obsolete

Infineon Technologies

MOSFET N-CH 60V 120A D2PAK

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Obsolete

Infineon Technologies

MOSFET N-CH 60V 120A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	AUIRFS3306TRL

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	125 nC
Input Capacitance (Ciss) (Max) @ Vds	4520 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	230 W
Rds On (Max) @ Id, Vgs	4.2 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Technology	FET Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)
Infineon Technologies AUIRFS3306TRL	Surface Mount	4520 pF	125 nC	4.2 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	-55 °C	175 ░C	MOSFET (Metal Oxide)	N-Channel	4 V	120 A	20 V	230 W	10 V	60 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 120A (Tc) 230W (Tc) Surface Mount PG-TO263-3

Technical documentation and resources

No documents available