IXFX44N55Q

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IXYS

MOSFET N-CH 550V 44A PLUS247-3

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IXYS

MOSFET N-CH 550V 44A PLUS247-3

Technical Specifications

Parameters and characteristics for this part

Specification	IXFX44N55Q

Current - Continuous Drain (Id) @ 25°C	44 A
Drain to Source Voltage (Vdss)	550 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	190 nC
Input Capacitance (Ciss) (Max) @ Vds	6400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3 Variant
Power Dissipation (Max)	500 W
Rds On (Max) @ Id, Vgs	120 mOhm
Supplier Device Package	PLUS247™-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Vgs(th) (Max) @ Id	Technology	Vgs (Max)	Power Dissipation (Max)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Package / Case	Current - Continuous Drain (Id) @ 25°C
IXYS IXFX44N55Q	4.5 V	MOSFET (Metal Oxide)	20 V	500 W	PLUS247™-3	190 nC	550 V	-55 °C	150 °C	N-Channel	120 mOhm	6400 pF	10 V	Through Hole	TO-247-3 Variant	44 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 550 V 44A (Tc) 500W (Tc) Through Hole PLUS247™-3

Technical documentation and resources