STU5N52K3

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STMicroelectronics

MOSFET N-CH 525V 4.4A IPAK

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STMicroelectronics

MOSFET N-CH 525V 4.4A IPAK

Technical Specifications

Parameters and characteristics for this part

Specification	STU5N52K3

Current - Continuous Drain (Id) @ 25°C	4.4 A
Drain to Source Voltage (Vdss)	525 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Input Capacitance (Ciss) (Max) @ Vds	545 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	70 W
Rds On (Max) @ Id, Vgs	1.5 Ohm
Supplier Device Package	TO-251 (IPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

MOSFET N-CH 525V 4.4A IPAK

Part	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Technology	Mounting Type	Vgs(th) (Max) @ Id	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)
STMicroelectronics STU5N52K3	525 V	10 V	TO-251 (IPAK)	17 nC	MOSFET (Metal Oxide)	Through Hole	4.5 V	N-Channel	545 pF	1.5 Ohm	30 V	4.4 A	IPAK, TO-251-3 Short Leads, TO-251AA	-55 °C	150 °C	70 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 525 V 4.4A (Tc) 70W (Tc) Through Hole TO-251 (IPAK)

Technical documentation and resources