EKG1020

Active

Sanken Electric USA Inc.

LOW RON MOSFET 100V/20A/0.033

Search across all available documentation for this part.

Active

Sanken Electric USA Inc.

LOW RON MOSFET 100V/20A/0.033

Technical Specifications

Parameters and characteristics for this part

Specification	EKG1020

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	45 nC
Input Capacitance (Ciss) (Max) @ Vds	2200 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	55 W
Rds On (Max) @ Id, Vgs	12.5 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.5 V

LOW RON MOSFET 100V/20A/0.033

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Power Dissipation (Max) [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Operating Temperature	Supplier Device Package	Vgs(th) (Max) @ Id [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Mounting Type
Sanken Electric USA Inc. EKG1020	4.5 V, 10 V	20 V	55 W	N-Channel	45 nC	MOSFET (Metal Oxide)	150 °C	TO-220-3	2.5 V	20 A	TO-220-3	12.5 mOhm	2200 pF	100 V	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 20A (Ta) 55W (Tc) Through Hole TO-220-3

Technical documentation and resources