71256L100TDB

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IDT, Integrated Device Technology Inc

IC SRAM 256KBIT PARALLEL 28CDIP

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IDT, Integrated Device Technology Inc

IC SRAM 256KBIT PARALLEL 28CDIP

Technical Specifications

Parameters and characteristics for this part

Specification	71256L100TDB

Access Time	100 ns
Memory Format	SRAM
Memory Interface	Parallel
Memory Organization	32K x 8
Memory Size	32 KB
Memory Type	Volatile
Mounting Type	Through Hole
Operating Temperature [Max]	125 °C
Operating Temperature [Min]	-55 °C
Package / Case	7.62 mm
Package / Case	0.3 in
Package / Case	28-CDIP
Supplier Device Package	28-CDIP
Technology	SRAM - Asynchronous
Voltage - Supply [Max]	5.5 V
Voltage - Supply [Min]	4.5 V
Write Cycle Time - Word, Page [custom]	100 ns
Write Cycle Time - Word, Page [custom]	100 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	9	$ 33.63

IC SRAM 256KBIT PARALLEL 28CDIP

Part	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]	Memory Type	Package / Case	Package / Case	Package / Case	Memory Format	Technology	Voltage - Supply [Min]	Voltage - Supply [Max]	Access Time	Memory Size	Memory Interface	Supplier Device Package	Mounting Type	Memory Organization	Operating Temperature [Max]	Operating Temperature [Min]
IDT, Integrated Device Technology Inc 71256L100TDB	100 ns	100 ns	Volatile	7.62 mm	0.3 in	28-CDIP	SRAM	SRAM - Asynchronous	4.5 V	5.5 V	100 ns	32 KB	Parallel	28-CDIP	Through Hole	32K x 8	125 °C	-55 °C

General part information

SRAM - Asynchronous Memory IC 256Kbit Parallel 100 ns 28-CDIP

Technical documentation and resources

No documents available