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STW24N60M2

STW24N60M2

Active
STMicroelectronics

N-CHANNEL 600 V, 0.168 OHM TYP., 18 A MDMESH M2 POWER MOSFET IN TO-247 PACKAGE

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STW24N60M2

STW24N60M2

Active
STMicroelectronics

N-CHANNEL 600 V, 0.168 OHM TYP., 18 A MDMESH M2 POWER MOSFET IN TO-247 PACKAGE

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Description

General part information

STW24N60M2 Series

These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.

Technical Specifications

Parameters and characteristics for this part

SpecificationSTW24N60M2
Current - Continuous Drain (Id) (Tc)18 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)29 nC
Input Capacitance (Ciss) (Max)1060 pF
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-247-3
Package NameTO-247-3
Power Dissipation (Max)150 W
Rds On (Max)190 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max)4 V

Pricing

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CAD

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