Technical Specifications
Parameters and characteristics for this part
| Specification | DMP58D1LVQ-13 |
|---|---|
| Configuration | 2 P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 220 mA |
| Drain to Source Voltage (Vdss) | 50 V |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 1.2 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 37 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-666, SOT-563 |
| Power - Max [Max] | 490 mW |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 8 Ohm |
| Supplier Device Package | SOT-563 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 10000 | $ 0.06 | |
| 20000 | $ 0.06 | |||
| 30000 | $ 0.05 | |||
| 50000 | $ 0.05 | |||
| 70000 | $ 0.05 | |||
| 100000 | $ 0.05 | |||
Description
General part information
DMP58D1LVQ Series
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: general purpose interfacing switches, power management functions, and analog switches.
Documents
Technical documentation and resources