62-0063PBF

Obsolete

Infineon Technologies

MOSFET N-CH 12V 15A 8SO

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Obsolete

Infineon Technologies

MOSFET N-CH 12V 15A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	62-0063PBF

Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	2.8 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	40 nC
Input Capacitance (Ciss) (Max) @ Vds	2550 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.9 V

Part	Supplier Device Package	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Power Dissipation (Max)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Current - Continuous Drain (Id) @ 25°C
Infineon Technologies 62-0063PBF	8-SO	Surface Mount	-55 °C	150 °C	8-SOIC	3.9 mm	0.154 in	1.9 V	2550 pF	N-Channel	2.5 W	12 V	2.8 V	4.5 V	12 V	40 nC	MOSFET (Metal Oxide)	15 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 12 V 15A (Ta) 2.5W (Ta) Surface Mount 8-SO

Technical documentation and resources