APTSM120AM08CT6AG
ActiveMicrosemi Corporation
SIC 2N-CH 1200V 370A SP6
Deep-Dive with AI
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APTSM120AM08CT6AG
ActiveMicrosemi Corporation
SIC 2N-CH 1200V 370A SP6
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | APTSM120AM08CT6AG |
|---|---|
| Configuration | 2 N-Channel (Dual), Schottky |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drain to Source Voltage (Vdss) | 1.2 kV |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 1360 nC |
| Mounting Type | Chassis Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 C |
| Package / Case | SP6 |
| Power - Max [Max] | 2300 W |
| Rds On (Max) @ Id, Vgs | 10 mOhm |
| Supplier Device Package | SP6 |
| Technology | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
APTSM120 Series
Mosfet Array 1200V (1.2kV) 370A (Tc) 2300W Chassis Mount SP6
Documents
Technical documentation and resources
No documents available