AUIRFSA8409-7P

Obsolete

Infineon Technologies

MOSFET N-CH 40V 523A D2PAK

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Obsolete

Infineon Technologies

MOSFET N-CH 40V 523A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	AUIRFSA8409-7P

Current - Continuous Drain (Id) @ 25°C	523 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	460 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	13975 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263-7, D2PAK
Power Dissipation (Max) [Max]	375 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	0.69 mOhm
Supplier Device Package	PG-TO263-7
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.9 V

Part	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Grade	Supplier Device Package	Rds On (Max) @ Id, Vgs	FET Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Qualification	Power Dissipation (Max) [Max]	Package / Case	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Mounting Type
Infineon Technologies AUIRFSA8409-7TRL	523 A	460 nC	Automotive	PG-TO263-7	0.69 mOhm	N-Channel	40 V	-55 °C	175 ░C	AEC-Q101	375 W	D2PAK TO-263-7	3.9 V	10 V	MOSFET (Metal Oxide)	13975 pF	20 V	Surface Mount
Infineon Technologies AUIRFSA8409-7P	523 A	460 nC	Automotive	PG-TO263-7	0.69 mOhm	N-Channel	40 V	-55 °C	175 ░C	AEC-Q101	375 W	D2PAK TO-263-7	3.9 V	10 V	MOSFET (Metal Oxide)	13975 pF	20 V	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 40 V 523A (Tc) 375W (Tc) Surface Mount PG-TO263-7

Technical documentation and resources