EPC2110

Active

Efficient Power Conversion Corporation

GANFET 2N-CH 120V 3.4A DIE

Search across all available documentation for this part.

Active

Efficient Power Conversion Corporation

GANFET 2N-CH 120V 3.4A DIE

Technical Specifications

Parameters and characteristics for this part

Specification	EPC2110

Configuration	2 N-Channel (Dual) Common Source
Current - Continuous Drain (Id) @ 25°C	3.4 A
Drain to Source Voltage (Vdss)	120 V
Gate Charge (Qg) (Max) @ Vgs	0.8 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	80 pF
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	Die
Rds On (Max) @ Id, Vgs	60 mOhm
Supplier Device Package	Die
Technology	GaNFET (Gallium Nitride)
Vgs(th) (Max) @ Id [Max]	2.5 V

Part	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Configuration	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs
Efficient Power Conversion Corporation EPC2110ENGRT	150 °C	-40 °C	Surface Mount	80 pF	Die	2 N-Channel (Dual) Common Source	3.4 A	2.5 V	Die	60 mOhm	0.8 nC	GaNFET (Gallium Nitride)	120 V
Efficient Power Conversion Corporation EPC2111	150 °C	-40 °C	Surface Mount		Die	2 N-Channel (Half Bridge)			Die	8 mOhm 19 mOhm	2.2 nC	GaNFET (Gallium Nitride)	30 V	2.5 V	230 pF 590 pF	5.7 nC
Efficient Power Conversion Corporation EPC2110	150 °C	-40 °C		80 pF	Die	2 N-Channel (Dual) Common Source	3.4 A	2.5 V	Die	60 mOhm	0.8 nC	GaNFET (Gallium Nitride)	120 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 120V 3.4A Die

Technical documentation and resources