EPC2110

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GANFET 2N-CH 120V 3.4A DIE

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GANFET 2N-CH 120V 3.4A DIE

Description

General part information

Mosfet Array 120V 3.4A Die

Parameters and characteristics for this part

Part	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id)	Package Name	Mounting Type	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Package / Case	Rds On (Max)	Gate Charge (Max)	Channel Count	Configuration - Features	Configuration	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Ta)
EPC EPC2110ENGRT	80 pF	3.4 A	Die	Surface Mount	2.5 V	120 V	Die	60 mOhm	0.8 nC	2	Dual	N-Channel	GaNFET (Gallium Nitride)	-40 °C	150 °C
EPC EPC2111	230 pF 590 pF 595 pF		Die	Surface Mount	2.5 V 2.5 V	30 V	Die	19 mOhm	2.2 nC 2.2 nC 2.2 nC 5.7 nC 5.8 nC	2	Half Bridge	N-Channel	GaNFET (Gallium Nitride)	-40 °C	150 °C	16 A
EPC EPC2110	80 pF	3.4 A	Die		2.5 V	120 V	Die	60 mOhm	0.8 nC	2	Dual	N-Channel	GaNFET (Gallium Nitride)	-40 °C	150 °C

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3D models and CAD resources for this part

Technical documentation and resources