AONR66406

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 40V 22A/30A 8DFN

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 40V 22A/30A 8DFN

Technical Specifications

Parameters and characteristics for this part

Specification	AONR66406

Current - Continuous Drain (Id) @ 25°C	30 A, 22 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	5 W, 27 W
Rds On (Max) @ Id, Vgs	6.1 mOhm
Supplier Device Package	8-DFN-EP (3x3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Package / Case	Supplier Device Package	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	FET Type	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Mounting Type	Technology	Vgs(th) (Max) @ Id
Alpha & Omega Semiconductor Inc. AONR66406	8-PowerVDFN	8-DFN-EP (3x3)	40 V	4.5 V 10 V	30 nC	N-Channel	6.1 mOhm	5 W 27 W	-55 °C	150 °C	22 A 30 A	20 V	Surface Mount	MOSFET (Metal Oxide)	2.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 22A (Ta), 30A (Tc) 5W (Ta), 27W (Tc) Surface Mount 8-DFN-EP (3x3)

Technical documentation and resources