S16KR

Active

GeneSiC Semiconductor

DIODE GEN PURP 800V 16A DO220AA

Search across all available documentation for this part.

Active

GeneSiC Semiconductor

DIODE GEN PURP 800V 16A DO220AA

Technical Specifications

Parameters and characteristics for this part

Specification	S16KR

Current - Average Rectified (Io)	16 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Stud, DO-203AA, DO-4
Speed	Standard Recovery >500ns
Speed	200 mA
Technology	Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Technology	Mounting Type
GeneSiC Semiconductor S16KR	10 µA	16 A	1.1 V	Standard Recovery >500ns	200 mA	800 V	175 ░C	-65 C	DO-203AA DO-4 Stud	Reverse Polarity Standard	Chassis Stud Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1500	$ 3.83

General part information

Diode 800 V 16A Chassis, Stud Mount

Technical documentation and resources