STFH13N60M2

Obsolete

STMicroelectronics

MOSFET N-CH 600V 11A TO220FP

Search across all available documentation for this part.

Obsolete

STMicroelectronics

MOSFET N-CH 600V 11A TO220FP

Technical Specifications

Parameters and characteristics for this part

Specification	STFH13N60M2

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Input Capacitance (Ciss) (Max) @ Vds	580 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	25 W
Rds On (Max) @ Id, Vgs	380 mOhm
Supplier Device Package	TO-220FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

Part	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	FET Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Technology	Mounting Type	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package
STMicroelectronics STFH13N60M2	380 mOhm	17 nC	N-Channel	4 V	580 pF	TO-220-3 Full Pack	MOSFET (Metal Oxide)	Through Hole	25 W	600 V	10 V	11 A	25 V	-55 °C	150 °C	TO-220FP

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 11A (Tc) 25W (Tc) Through Hole TO-220FP

Technical documentation and resources

No documents available