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STW45N60DM2AG - TO-247-3

STW45N60DM2AG

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STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 600 V, 0.085 OHM TYP., 34 A MDMESH DM2 POWER MOSFET IN A TO-247 PACKAGE

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STW45N60DM2AG - TO-247-3

STW45N60DM2AG

Active
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 600 V, 0.085 OHM TYP., 34 A MDMESH DM2 POWER MOSFET IN A TO-247 PACKAGE

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DocumentsDatasheet

Technical Specifications

Parameters and characteristics commom to parts in this series

SpecificationSTW45N60DM2AGSTW45 Series
Current - Continuous Drain (Id) @ 25°C34 A34 - 35 A
Drain to Source Voltage (Vdss)600 V600 - 650 V
Drive Voltage (Max Rds On, Min Rds On)10 V10 V
FET TypeN-ChannelN-Channel
Gate Charge (Qg) (Max) @ Vgs56 nC56 nC
Gate Charge (Qg) (Max) @ Vgs-91 nC
GradeAutomotiveAutomotive
Input Capacitance (Ciss) (Max) @ Vds-3375 pF
Input Capacitance (Ciss) (Max) @ Vds [Max]2500 pF2500 pF
Mounting TypeThrough HoleThrough Hole
Operating Temperature-150 °C
Operating Temperature [Max]150 °C150 °C
Operating Temperature [Min]-55 °C-55 °C
Package / CaseTO-247-3TO-247-3
Power Dissipation (Max)-210 W
Power Dissipation (Max) [Max]250 W250 W
QualificationAEC-Q101AEC-Q101
Rds On (Max) @ Id, Vgs93 mOhm93 mOhm
Supplier Device PackageTO-247-3TO-247-3
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)
Vgs (Max)25 V20 - 25 V
Vgs(th) (Max) @ Id5 V5 V

STW45 Series

Automotive-grade N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in a TO-247 package

PartGradeGate Charge (Qg) (Max) @ VgsTechnologyPower Dissipation (Max) [Max]QualificationPackage / CaseMounting TypeVgs (Max)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsCurrent - Continuous Drain (Id) @ 25°COperating Temperature [Min]Operating Temperature [Max]Input Capacitance (Ciss) (Max) @ Vds [Max]Supplier Device PackageVgs(th) (Max) @ IdFET TypeDrain to Source Voltage (Vdss)Gate Charge (Qg) (Max) @ Vgs [Max] [custom]Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Operating Temperature
STMicroelectronics
STW45N60DM2AG
Automotive
56 nC
MOSFET (Metal Oxide)
250 W
AEC-Q101
TO-247-3
Through Hole
25 V
10 V
93 mOhm
34 A
-55 °C
150 °C
2500 pF
TO-247-3
5 V
N-Channel
600 V
STMicroelectronics
STW45N65M5
MOSFET (Metal Oxide)
TO-247-3
Through Hole
20 V
10 V
35 A
TO-247-3
5 V
N-Channel
650 V
91 nC
3375 pF
210 W
150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 6.81
30$ 4.50
120$ 4.01
510$ 3.72

Description

General part information

STW45 Series

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge and time (Qrr, trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Documents

Technical documentation and resources