STW45N65M5

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STMicroelectronics

N-CHANNEL 650 V, 0.067 OHM TYP., 35 A MDMESH M5 POWER MOSFET IN TO-247 PACKAGE

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STW45N65M5

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STMicroelectronics

N-CHANNEL 650 V, 0.067 OHM TYP., 35 A MDMESH M5 POWER MOSFET IN TO-247 PACKAGE

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	STW45N65M5	STW45 Series

Current - Continuous Drain (Id) @ 25°C	35 A	34 - 35 A
Drain to Source Voltage (Vdss)	650 V	600 - 650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V	10 V
FET Type	N-Channel	N-Channel
Gate Charge (Qg) (Max) @ Vgs	-	56 nC
Gate Charge (Qg) (Max) @ Vgs [Max] [custom]	91 nC	91 nC
Grade	-	Automotive
Input Capacitance (Ciss) (Max) @ Vds	3375 pF	3375 pF
Input Capacitance (Ciss) (Max) @ Vds	-	2500 pF
Mounting Type	Through Hole	Through Hole
Operating Temperature	150 °C	150 °C
Operating Temperature	-	-55 °C
Operating Temperature	-	150 °C
Package / Case	TO-247-3	TO-247-3
Power Dissipation (Max)	210 W	210 W
Power Dissipation (Max)	-	250 W
Qualification	-	AEC-Q101
Rds On (Max) @ Id, Vgs	-	93 mOhm
Supplier Device Package	TO-247-3	TO-247-3
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (Max)	20 V	20 - 25 V
Vgs(th) (Max) @ Id	5 V	5 V

STW45 Series

Automotive-grade N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in a TO-247 package

Part	Grade	Gate Charge (Qg) (Max) @ Vgs	Technology	Power Dissipation (Max) [Max]	Qualification	Package / Case	Mounting Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	FET Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max] [custom]	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Operating Temperature
STMicroelectronics STW45N60DM2AG	Automotive	56 nC	MOSFET (Metal Oxide)	250 W	AEC-Q101	TO-247-3	Through Hole	25 V	10 V	93 mOhm	34 A	-55 °C	150 °C	2500 pF	TO-247-3	5 V	N-Channel	600 V
STMicroelectronics STW45N65M5			MOSFET (Metal Oxide)			TO-247-3	Through Hole	20 V	10 V		35 A				TO-247-3	5 V	N-Channel	650 V	91 nC	3375 pF	210 W	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 5.27
		10	$ 5.22
		25	$ 4.49
		50	$ 4.45
		100	$ 4.40
		250	$ 4.36
Digikey	Tube	1	$ 9.45
		10	$ 6.48
		100	$ 4.80
		500	$ 4.24

Description

General part information

STW45 Series

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge and time (Qrr, trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

STW45N65M5

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STW45N65M5

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Technical Specifications

STW45 Series

Pricing

Description

STW45 Series

Documents

Datasheet

Datasheet

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TN1156

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Technical Specifications

STW45 Series