SSM3K09FU,LF

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Toshiba Semiconductor and Storage

MOSFET N-CH 30V 400MA USM

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Toshiba Semiconductor and Storage

MOSFET N-CH 30V 400MA USM

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3K09FU,LF

Current - Continuous Drain (Id) @ 25°C	400 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	3.3 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	20 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-70, SOT-323
Power Dissipation (Max) [Max]	150 mW
Rds On (Max) @ Id, Vgs [Max]	700 mOhm
Supplier Device Package	USM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1.8 V

Part	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Package / Case	FET Type	Vgs (Max)	Technology	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Power Dissipation (Max) [Max]
Toshiba Semiconductor and Storage SSM3K09FU,LF	30 V	1.8 V	SC-70 SOT-323	N-Channel	20 V	MOSFET (Metal Oxide)	USM	20 pF	Surface Mount	3.3 V	10 V	700 mOhm	400 mA	150 °C	150 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 400mA (Ta) 150mW (Ta) Surface Mount USM

Technical documentation and resources