AOTF2N60L

Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 2A TO220-3F

Search across all available documentation for this part.

Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 2A TO220-3F

Technical Specifications

Parameters and characteristics for this part

Specification	AOTF2N60L

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	11.4 nC
Input Capacitance (Ciss) (Max) @ Vds	325 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	31 W
Rds On (Max) @ Id, Vgs	4.4 Ohm
Supplier Device Package	TO-220F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Package / Case	Supplier Device Package	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Technology	Mounting Type	FET Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs
Alpha & Omega Semiconductor Inc. AOTF2N60L	-55 °C	150 °C	600 V	4.5 V	10 V	30 V	TO-220-3 Full Pack	TO-220F	31 W	325 pF	2 A	MOSFET (Metal Oxide)	Through Hole	N-Channel	4.4 Ohm	11.4 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 2A (Tc) 31W (Tc) Through Hole TO-220F

Technical documentation and resources

No documents available