SUP70040E-GE3

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Vishay Siliconix

MOSFET N-CH 100V 120A TO220AB

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Vishay Siliconix

MOSFET N-CH 100V 120A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SUP70040E-GE3

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	120 nC
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	375 W
Rds On (Max) @ Id, Vgs	4 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

MOSFET N-CH 100V 120A TO220AB

Part	Technology	Vgs(th) (Max) @ Id	Package / Case	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Power Dissipation (Max) [Max]	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Drain to Source Voltage (Vdss)	Vgs (Max)
Vishay Siliconix SUP70040E-GE3	MOSFET (Metal Oxide)	4 V	TO-220-3	4 mOhm	10 V	7.5 V	120 nC	120 A	TO-220AB	375 W	Through Hole	-55 °C	175 ░C	N-Channel	100 V	20 V

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General part information

N-Channel 100 V 120A (Tc) 375W (Tc) Through Hole TO-220AB

Technical documentation and resources