STS7PF30L

Obsolete

STMicroelectronics

MOSFET P-CH 30V 7A 8SO

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Obsolete

STMicroelectronics

MOSFET P-CH 30V 7A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	STS7PF30L

Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC
Input Capacitance (Ciss) (Max) @ Vds	2600 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	21 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Supplier Device Package	Vgs(th) (Max) @ Id	FET Type	Operating Temperature	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Technology	Package / Case	Package / Case [y]	Package / Case [x]	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Power Dissipation (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]
STMicroelectronics STS7PF30L	8-SOIC	2.5 V	P-Channel	150 °C	21 mOhm	30 V	4.5 V 10 V	7 A	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	2600 pF	20 V	2.5 W	Surface Mount	38 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 30 V 7A (Tc) 2.5W (Tc) Surface Mount 8-SOIC

Technical documentation and resources