MEK350-02DA

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IXYS

DIODE MODULE GP 200V 356A Y4-M6

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Active

IXYS

DIODE MODULE GP 200V 356A Y4-M6

Technical Specifications

Parameters and characteristics for this part

Specification	MEK350-02DA

Current - Average Rectified (Io) (per Diode)	356 A
Current - Reverse Leakage @ Vr	3 mA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	Y4-M6
Reverse Recovery Time (trr)	200 ns
Speed	200 mA, 500 ns
Supplier Device Package	Y4-M6
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1.07 V

Part	Supplier Device Package	Current - Average Rectified (Io) (per Diode)	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Diode Configuration	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Speed	Technology	Reverse Recovery Time (trr)
IXYS MEK350-02DA	Y4-M6	356 A	Chassis Mount	1.07 V	200 V	3 mA	1 Pair Common Cathode	150 °C	-40 °C	Y4-M6	200 mA 500 ns	Standard	200 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 1 Pair Common Cathode 200 V 356A Chassis Mount Y4-M6

Technical documentation and resources