STW160N75F3

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STMicroelectronics

MOSFET N-CH 75V 120A TO247-3

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STMicroelectronics

MOSFET N-CH 75V 120A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	STW160N75F3

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	85 nC
Input Capacitance (Ciss) (Max) @ Vds	6750 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	330 W
Rds On (Max) @ Id, Vgs	4 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

MOSFET N-CH 75V 120A TO247-3

Part	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Vgs (Max)	Mounting Type	Package / Case	Supplier Device Package	Technology	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Power Dissipation (Max)
STMicroelectronics STW160N75F3	4 V	-55 °C	175 ░C	N-Channel	85 nC	4 mOhm	20 V	Through Hole	TO-247-3	TO-247-3	MOSFET (Metal Oxide)	120 A	10 V	6750 pF	75 V	330 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 75 V 120A (Tc) 330W (Tc) Through Hole TO-247-3

Technical documentation and resources