STSJ100NH3LL

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STMicroelectronics

MOSFET N-CH 30V 100A 8SOIC

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STMicroelectronics

MOSFET N-CH 30V 100A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	STSJ100NH3LL

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	40 nC
Input Capacitance (Ciss) (Max) @ Vds	4450 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Power Dissipation (Max)	3 W, 70 W
Supplier Device Package	8-SOIC-EP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	1 V

MOSFET N-CH 30V 100A 8SOIC

Part	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Power Dissipation (Max)	Mounting Type	Package / Case	Package / Case	Package / Case	Vgs (Max)	Drain to Source Voltage (Vdss)	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Technology	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds
STMicroelectronics STSJ100NH3LL	4.5 V, 10 V	8-SOIC-EP	3 W, 70 W	Surface Mount	0.154 in	8-SOIC	3.9 mm	16 V	30 V	150 °C	100 A	MOSFET (Metal Oxide)	N-Channel	40 nC	1 V	4450 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 100A (Tc) 3W (Ta), 70W (Tc) Surface Mount 8-SOIC-EP

Technical documentation and resources