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STY60NM60 - STMicroelectronics-STGY50NC60WD IGBT Chip Trans IGBT Chip N-CH 600V 110A 278W 3-Pin(3+Tab) Max247 Tube

STY60NM60

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STMicroelectronics

N-CHANNEL 600V - 0.050 OHM - 60A MAX247 ZENER-PROTECTED MDMESH(TM)POWER MOSFET

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DocumentsAN4337+15
STY60NM60 - STMicroelectronics-STGY50NC60WD IGBT Chip Trans IGBT Chip N-CH 600V 110A 278W 3-Pin(3+Tab) Max247 Tube

STY60NM60

Active
STMicroelectronics

N-CHANNEL 600V - 0.050 OHM - 60A MAX247 ZENER-PROTECTED MDMESH(TM)POWER MOSFET

Deep-Dive with AI

DocumentsAN4337+15

Technical Specifications

Parameters and characteristics commom to parts in this series

SpecificationSTY60NM60STY60NM60 Series
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Pricing

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STY60NM60 Series

N-CHANNEL 600V - 0.050 Ohm - 60A Max247 Zener-Protected MDmesh(TM)Power MOSFET

Part
STMicroelectronics
STY60NM60
STMicroelectronics
STY60NM60

Description

General part information

STY60NM60 Series

The MDmeshTMis a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESHTMhorizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.