IRF640

Obsolete

STMicroelectronics

MOSFET N-CH 200V 18A TO220AB

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Obsolete

STMicroelectronics

MOSFET N-CH 200V 18A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	IRF640

Current - Continuous Drain (Id) @ 25°C	18 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	72 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1560 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	180 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	Mounting Type	Technology	FET Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Package / Case	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds [Max]
STMicroelectronics IRF634	250 V	Through Hole	MOSFET (Metal Oxide)	N-Channel	20 V	51.8 nC	4 V	TO-220-3	8 A	80 W	450 mOhm	770 pF	TO-220	10 V	150 °C
STMicroelectronics IRF640	200 V	Through Hole	MOSFET (Metal Oxide)	N-Channel	20 V	72 nC	4 V	TO-220-3	18 A	125 W	180 mOhm		TO-220	10 V	150 °C	1560 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 200 V 18A (Tc) 125W (Tc) Through Hole TO-220

Technical documentation and resources