ACGRAT104L-HF

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Comchip Technology

DIODE GEN PURP 800V 1A 2010

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Comchip Technology

DIODE GEN PURP 800V 1A 2010

Technical Specifications

Parameters and characteristics for this part

Specification	ACGRAT104L-HF

Capacitance @ Vr, F	8 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	2-SMD, No Lead
Qualification	AEC-Q101
Speed	200 mA, 500 ns
Supplier Device Package	2010
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If	1 V

DIODE GEN PURP 800V 1A 2010

Part	Technology	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Grade	Speed	Mounting Type	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Package / Case	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Qualification
Comchip Technology ACGRAT104L-HF	Standard	2010	1 V	Automotive	200 mA, 500 ns	Surface Mount	1 A	5 µA	2-SMD, No Lead	8 pF	800 V	175 ░C	-65 C	AEC-Q101

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General part information

Diode 800 V 1A Surface Mount 2010

Technical documentation and resources

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