BUJ105A,127

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WeEn Semiconductors

SOT78/SILICON DIFFUSED POWER TRANSISTOR

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WeEn Semiconductors

SOT78/SILICON DIFFUSED POWER TRANSISTOR

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General part information

Bipolar (BJT) Transistor NPN 400 V 8 A 80 W Through Hole TO-220AB

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Specification	BUJ105A,127	BUJ105 Series

Current - Collector (Ic) (Max) [Max]	8 A	8 A
Current - Collector Cutoff (Max) [Max]	100 µA	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	13	13
Mounting Type	Through Hole	Surface Mount, Through Hole
Operating Temperature	150 °C	150 °C
Package / Case	TO-220-3	SC-63, DPAK (2 Leads + Tab), TO-252-3, D2PAK (2 Leads + Tab), TO-263AB, TO-263-3, TO-220-3
Power - Max [Max]	80 W	80 W
Supplier Device Package	TO-220AB	DPAK, D2PAK, TO-220AB
Transistor Type	NPN	NPN
Vce Saturation (Max) @ Ib, Ic	1 V	1 V
Voltage - Collector Emitter Breakdown (Max)	400 V	400 V

Part	Package / Case	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature	Mounting Type	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic
WeEn Semiconductors BUJ105AD,118	DPAK (2 Leads + Tab), SC-63, TO-252-3	80 W	100 µA	8 A	400 V	NPN	13	150 °C	Surface Mount	DPAK	1 V
WeEn Semiconductors BUJ105AB,118	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB		100 µA	8 A	400 V	NPN	13	150 °C	Surface Mount	D2PAK	1 V
WeEn Semiconductors BUJ105A,127	TO-220-3	80 W	100 µA	8 A	400 V	NPN	13	150 °C	Through Hole	TO-220AB	1 V