IXTT75N10

Obsolete

IXYS

MOSFET N-CH 100V 75A TO268

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Obsolete

IXYS

MOSFET N-CH 100V 75A TO268

Technical Specifications

Parameters and characteristics for this part

Specification	IXTT75N10

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	260 nC
Input Capacitance (Ciss) (Max) @ Vds	4500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D3PAK (2 Leads + Tab), TO-268AA, TO-268-3
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs	20 mOhm
Supplier Device Package	TO-268AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	4 V

Part	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Supplier Device Package	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)
IXYS IXTT75N10	300 W	100 V	Surface Mount	260 nC	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	-55 °C	150 °C	MOSFET (Metal Oxide)	TO-268AA	20 mOhm	4500 pF	N-Channel	75 A	4 V	20 V	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 75A (Tc) 300W (Tc) Surface Mount TO-268AA

Technical documentation and resources

No documents available