UF3007-G

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Comchip Technology

DIODE GEN PURP 800V 3A DO27

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Comchip Technology

DIODE GEN PURP 800V 3A DO27

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	UF3007-G	UF3007 Series

Capacitance @ Vr, F	30 pF	30 pF
Current - Average Rectified (Io)	3 A	3 A
Current - Reverse Leakage @ Vr	5 µA	5 µA
Mounting Type	Through Hole	Through Hole
Operating Temperature - Junction [Max]	125 °C	125 °C
Operating Temperature - Junction [Min]	-55 °C	-55 °C
Package / Case	Axial, DO-27, DO-201AA	Axial, DO-27, DO-201AA
Reverse Recovery Time (trr)	75 ns	75 ns
Speed	200 mA, 500 ns	200 - 500 mA
Supplier Device Package	DO-27	DO-27
Technology	Standard	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V	800 V
Voltage - Forward (Vf) (Max) @ If	1.7 V	1.7 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1200	$ 0.16

DIODE GEN PURP 800V 3A DO27

Part	Voltage - Forward (Vf) (Max) @ If	Speed	Supplier Device Package	Current - Reverse Leakage @ Vr	Mounting Type	Capacitance @ Vr, F	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Package / Case	Technology	Voltage - DC Reverse (Vr) (Max) [Max]
Comchip Technology UF3007-G	1.7 V	200 mA, 500 ns	DO-27	5 µA	Through Hole	30 pF	-55 °C	125 °C	3 A	75 ns	Axial, DO-201AA, DO-27	Standard	800 V
Comchip Technology UF3007-HF	1.7 V	200 mA, 500 ns	DO-27	5 µA	Through Hole	30 pF	-55 °C	125 °C	3 A	75 ns	Axial, DO-201AA, DO-27	Standard	800 V

General part information

Diode 800 V 3A Through Hole DO-27

Technical documentation and resources

No documents available