BUJ403A/DG,127

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WeEn Semiconductors

TRANS GP BJT NPN 550V 6A 3-PIN(3+TAB) TO-220AB RAIL

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WeEn Semiconductors

TRANS GP BJT NPN 550V 6A 3-PIN(3+TAB) TO-220AB RAIL

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General part information

Bipolar (BJT) Transistor NPN 550 V 6 A 100 W Through Hole TO-220AB

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Specification	BUJ403A/DG,127	BUJ403 Series

Current - Collector Cutoff (Max) [Max]	100 µA	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	20	20
Mounting Type	Through Hole	Through Hole
Operating Temperature	150 °C	150 °C
Package / Case	TO-220-3	TO-220-3
Power - Max [Max]	100 W	100 W
Supplier Device Package	TO-220AB	TO-220AB
Transistor Type	NPN	NPN
Vce Saturation (Max) @ Ib, Ic	1 V	1 V
Voltage - Collector Emitter Breakdown (Max)	550 V	550 V

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Operating Temperature	Transistor Type	Package / Case	Current - Collector Cutoff (Max) [Max]	Mounting Type	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max)
WeEn Semiconductors BUJ403A,127	20	1 V	TO-220AB	150 °C	NPN	TO-220-3	100 µA	Through Hole	100 W	550 V
WeEn Semiconductors BUJ403A/DG,127	20	1 V	TO-220AB	150 °C	NPN	TO-220-3	100 µA	Through Hole	100 W	550 V